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EDF1DM Datasheet(PDF) 1 Page - Vishay Siliconix |
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EDF1DM Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page EDF1AM thru EDF1DM Vishay General Semiconductor Document Number: 88577 Revision: 14-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Miniature Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for printed circuit boards • Ultrafast reverse recovery time for high frequency • Applicable for automative insertion • High surge current capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: DFM Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body PRIMARY CHARACTERISTICS IF(AV) 1 A VRRM 50 V to 200 V IFSM 50 A IR 5 µA VF 1.05 V trr 50 ns TJ max. 150 °C Case Style DFM ~ ~ ~ ~ MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EDF1AM EDF1BM EDF1CM EDF1DM UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 106 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Max. average forward output rectified current at TA = 40 °C IF(AV) 1.0 A Peak forward surge current single sine-wave superimposed on rated load IFSM 50 A Rating for fusing (t < 8.3 ms) I2t 10 A2s Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL EDF1AM EDF1BM EDF1CM EDF1DM UNIT Maximum instantaneous forward voltage drop per diode 1.0 A VF 1.05 V Maximum reverse current at rated DC blocking voltage per diode TA = 25 °C TA = 125 °C IR 5.0 1.0 µA mA Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns |
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