EDF1AM thru EDF1DM

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88577

Revision: 14-Jan-08

2

Note:

(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads

RATINGS AND CHARACTERISTICS CURVES

PARAMETER

SYMBOL

EDF1AM

EDF1BM

EDF1CM

EDF1DM

UNIT

38

12

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

EDF1DM-E3/45

0.418

45

50

Tube

Figure 1. Derating Curves Output Rectified Current

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

20

40

60

80

100

120

140

160

0

0.5

1.0

0.75

0.25

Capacitive

Loads

60 Hz Resistive

or Inductive Load

P.C.B. Mounted on

0.51 x 0.51" (13 x 13 mm)

Copper Pads with 0.06"

(1.5 mm) Lead Length

Ambient Temperature (°C)

1

10

100

0

10

20

30

40

50

60

1.0 Cycle

T

Single Sine-Wave

Number of Cycles at 60 Hz

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

T

Pulse Width = 300 µs

1 % Duty Cycle

0

20

40

60

80

100

0.1

1

10

100

1000

T

T

Percent of Rated Peak Reverse Voltage (%)