ESH1B, ESH1C & ESH1D

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88890

Revision: 27-Aug-07

2

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Note:

(1) Units mounted on P.C.B. with 5.0 x 5.0 mm (0.013 mm thick) land areas

Note:

(1) Automotive grade AEC Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous forward voltage

(1)

0.87

0.90

V

Maximum DC reverse current at rated

DC blocking voltage

1.0

25

µA

Maximum reverse current

50

µA

Maximum reverse recovery time

25

ns

Typical reverse recovery time

25

35

ns

Typical stored charge

10

15

nC

Typical junction capacitance

4.0 V, 1 MHz

25

pF

PARAMETER

SYMBOL

ESH1B

ESH1C

ESH1D

UNIT

85

30

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ESH1D-E3/61T

0.064

61T

1800

7" diameter plastic tape and reel

ESH1D-E3/5AT

0.064

5AT

7500

13" diameter plastic tape and reel

0.064

61T

1800

7" diameter plastic tape and reel

0.064

5AT

7500

13" diameter plastic tape and reel

Figure 1. Maximum Forward Current Derating Curve

0

1.2

95

105

115

125

135

145

155

165

Lead Temperature (°C)

0.8

1.0

0.2

0.4

0.6

175

T

at the Cathode Band Terminal

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

Number of Cycles at 60 Hz

1

10

100

10

40

20

50

30

0