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ZXTN25100DZ Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # ZXTN25100DZ
Description  100V NPN high gain transistor
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZXTN25100DZ Datasheet(HTML) 2 Page - Zetex Semiconductors

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ZXTN25100DZ
Issue 1 - December 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
180
V
Collector-Emitter voltage (forward blocking)
VCEX
180
V
Collector-Emitter voltage
VCEO
100
V
Emitter-Collector voltage (reverse blocking)
VECO
6V
Emitter-Base voltage
VEBO
7V
Continuous Collector current(c)
IC
2.5
A
Base current
IB
1A
Peak pulse current
ICM
3.5
A
Power dissipation at TA =25°C(a)
Linear derating factor
PD
1.1
8.8
W
mW/
°C
Power dissipation at TA =25°C(b)
Linear derating factor
PD
1.8
14.4
W
mW/
°C
Power dissipation at TA =25°C(c)
Linear derating factor
PD
2.4
19.2
W
mW/
°C
Power dissipation at TA =25°C(d)
Linear derating factor
PD
4.46
35.7
W
mW/
°C
Power dissipation at TC =25°C(e)
Linear derating factor
PD
19.2
153
W
mW/
°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Parameter
Symbol
Limit
Unit
Junction to ambient(a)
R JA
117
°C/W
Junction to ambient(b)
R JA
68
°C/W
Junction to ambient(c)
R JA
51
°C/W
Junction to ambient(d)
R JA
28
°C/W
Junction to case(e)
R JC
7.95
°C/W


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