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ZXTP5401GTC Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXTP5401GTC Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 8 page ZXTP5401G Issue 1 - August 2007 4 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -160 -270 V IC = -100 A, Collector-emitter breakdown voltage (base open) BVCEO -150 -240 V IC = -1mA * Emitter-base breakdown voltage BVEBO -5 -8.1 V IE = -10 A Collector cut-off current ICBO <-1 -50 nA VCB = -120V -50 AVCB = -120V, Tamb= 100°C Collector-emitter saturation voltage VCE(sat) -50 -200 mV IC = -10mA, IB = -1mA * -70 -500 mV IC = -50mA, IB = -5mA * Base-emitter saturation voltage VBE(sat) -700 -1000 mV IC = -10mA, IB = -1mA * -750 -1000 mV IC = -50mA, IB = -5mA * Static forward current transfer ratio hFE 50 135 IC = -1mA, VCE = -5V * 60 135 240 IC = -10mA, VCE = -5V * 50 130 IC = -50mA, VCE = -5V * Transition frequency fT 100 MHz IC = -10mA, VCE = -10V f = 100MHz Output capacitance COBO 6pF VCB = -10V, f = 1MHz * Delay time t(d) 386 ns VCC = -50V. IC = -100mA, IB1 = IB2= -10mA. Rise time t(r) 202 ns Storage time t(s) 1720 ns Fall time t(f) 275 ns |
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