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STL55NH3LL Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL55NH3LL
Description  N-channel 30 V, 0.0079 廓, 15 A, PowerFLAT??(6x5) ultra low gate charge STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL55NH3LL Datasheet(HTML) 3 Page - STMicroelectronics

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STL55NH3LL
Electrical ratings
3/14
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
(1)
1.
Continuous mode
Gate-source voltage
± 16
V
VGS
(2)
2.
Guaranteed for test time
≤ 15 ms
Gate-source voltage
± 18
V
ID
(3)
3.
The value is rated according Rthj-c
Drain current (continuous) at TC = 25 °C
55
A
ID
(3)
Drain current (continuous) at TC=100 °C
36
A
IDM
(4)
4.
Pulse width limited by safe operating area
Drain current (pulsed)
60
A
ID
(5)
5.
The value is rated according Rthj-pcb
Drain current (continuous) at TC = 25 °C
15
A
ID
(5)
Drain current (continuous) at TC=100 °C
9.4
A
PTOT
(5)
Total dissipation at TC = 25 °C
4
W
PTOT
(3)
Total dissipation at TC = 25 °C
60
W
Derating factor
0.03
W/°C
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain)
2.08
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-ambient
31.3
°C/W
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current
(pulse width limited by Tj Max)
7.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID=IAV, VDD = 24 V, L=6 mH)
150
mJ


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