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HFA06TB120STRPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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HFA06TB120STRPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 7 page  Document Number: 94039 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 22-Oct-08 1 HEXFRED® Ultrafast Soft Recovery Diode, 6 A HFA06TB120SPbF Vishay High Power Products FEATURES • Ultrafast recovery • Ultrasoft recovery • Very low IRRM • Very low Qrr • Specified at operating conditions • Lead (Pb)-free • Designed and qualified for Q101 level BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION HFA06TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 6 A continuous current, the HFA06TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR 1200 V VF at 6 A at 25 °C 3.0 V IF(AV) 6 A trr (typical) 26 ns TJ (maximum) 150 °C Qrr (typical) 116 nC dI(rec)M/dt (typical) at 125 °C 100 A/µs IRRM (typical) 4.4 A 1 + 3 2 Base cathode N/C Anode _ D2PAK Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage VR 1200 V Maximum continuous forward current IF TC = 100 °C 6 A Single pulse forward current IFSM 80 Maximum repetitive forward current IFRM 24 Maximum power dissipation PD TC = 25 °C 62.5 W TC = 100 °C 25 Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C * Pb containing terminations are not RoHS compliant, exemptions may apply |
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