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HFB08TB120PBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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HFB08TB120PBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Document Number: 93042 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 30-Jul-08 1 HEXFRED® Ultrafast Soft Recovery Diode, 8 A HFA08TB120 Vishay High Power Products FEATURES • Ultrafast recovery • Ultrasoft recovery • Very low IRRM • Very low Qrr • Specified at operating conditions • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION HFA08TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the HFA08TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR 1200 V VF at 8 A at 25 °C 3.3 V IF(AV) 8 A trr (typical) 28 ns TJ (maximum) 150 °C Qrr (typical) 140 nC dI(rec)M/dt (typical) at 125 °C 85 A/µs IRRM (typical) 4.5 A Anode 1 3 Cathode TO-220AC Base cathode 2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage VR 1200 V Maximum continuous forward current IF TC = 100 °C 8.0 A Single pulse forward current IFSM 130 Maximum repetitive forward current IFRM 32 Maximum power dissipation PD TC = 25 °C 73.5 W TC = 100 °C 29 Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C |
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