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20CTQ150S Datasheet(PDF) 1 Page - Vishay Siliconix |
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20CTQ150S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 93953 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 19-Aug-08 1 Schottky Rectifier, 2 x 10 A 20CTQ150S, 20CTQ150-1 Vishay High Power Products FEATURES • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed for industrial level DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 2 x 10 A VR 150 V 20CTQ150S D2PAK TO-262 20CTQ150-1 Base common cathode Anode Anode Common cathode 1 3 2 2 Base common cathode Anode Anode Common cathode 1 3 2 2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 20 A VRRM 150 V IFSM tp = 5 µs sine 1030 A VF 10 Apk, TJ = 125 °C (per leg) 0.66 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL 20CTQ150S 20CTQ150-1 UNITS Maximum DC reverse voltage VR 150 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 per leg IF(AV) 50 % duty cycle at TC = 154 °C, rectangular waveform 10 A per device 20 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 1030 10 ms sine or 6 ms rect. pulse 180 Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.7 A, L = 10 mH 2.45 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.7 A |
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