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ZXTC2061E6TA Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # ZXTC2061E6TA
Description  12V, SOT23-6, complementary medium power transistors
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZXTC2061E6TA Datasheet(HTML) 2 Page - Zetex Semiconductors

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ZXTC2061E6
Issue 2 - October 2008
2
www.zetex.com
© Diodes Incorporated 2008
www.diodes.com
Absolute maximum and thermal ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d) As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance
graph.
(f) For device with one active die, both collectors attached to a common sink.
(g) For device with two active dice running at equal power, split sink 50% to each collector.
PARAMETER
Symbol
Limit
Unit
Collector-base voltage
VCBO
20(-12)
V
Collector-emitter voltage
VCEO
12(-12)
V
Emitter-base voltage
VEBO
7(-7)
V
Continuous collector current(c)(f)
IC
5(-3.5)
A
Peak pulse current
ICM
12(-10)
A
Base current
IB
1(-1)
A
Power dissipation at TA =25°C(a)(f)
Linear derating factor
PD
0.7
5.6
W
mW/
°C
Power dissipation at TA =25°C(b)(f)
Linear derating factor
PD
0.9
7.2
W
mW/
°C
Power dissipation at TA =25°C(b)(g)
Linear derating factor
PD
1.1
8.8
W
mW/
°C
Power dissipation at TA =25°C(c)(f)
Linear derating factor
PD
1.1
8.8
W
mW/
°C
Power dissipation at TA =25°C(d)(f)
Linear derating factor
PD
1.7
13.6
W
mW/
°C
Operating and storage temperature range
Tj, Tstg
-55 to +150
°C
Thermal resistance junction to ambient(a)(f)
RθJA
179
°C/W
Thermal resistance junction to ambient(b)(f)
RθJA
139
°C/W
Thermal resistance junction to ambient(b)(g)
RθJA
113
°C/W
Thermal resistance junction to ambient(c)(f)
RθJA
113
°C/W
Thermal resistance junction to ambient(d)(f)
RθJA
73
°C/W


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