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ZXTN5551ZTA Datasheet(PDF) 3 Page - Zetex Semiconductors |
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ZXTN5551ZTA Datasheet(HTML) 3 Page - Zetex Semiconductors |
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3 / 8 page  ZXTN5551Z Issue 1 - August 2007 3 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 180 270 V IC = 100 A Collector-emitter breakdown voltage (base open) BVCEO 160 200 V IC = 1mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Emitter-base breakdown voltage BVEBO 67.85 V IE = 10 A Collector cut-off current ICBO <1 50 nA VCB = 120V 50 A VCB = 120V, Tamb= 100°C Collector-emitter saturation voltage VCE(sat) 65 150 mV IC = 10mA, IB = 1mA(*) 115 200 mV IC = 50mA, IB = 5mA(*) Base-emitter saturation voltage VBE(sat) 760 1000 mV IC = 10mA, IB = 1mA(*) 840 1200 mV IC = 50mA, IB = 5mA(*) Static forward current transfer ratio hFE 80 130 IC = 1mA, VCE = 5V(*) 80 145 250 IC = 10mA, VCE = 5V(*) 30 65 IC = 50mA, VCE = 5V(*) Transition frequency fT 130 MHz IC = 10mA, VCE = 10V f = 100MHz Output capacitance COBO 6pF VCB = 10V, f = 1MHz(*) Small signal hFE 50 260 IC = 10mA, VCE = 10V, f=1kHz (†) (†) Periodic sample test only Delay time t(d) 95 ns VCC = 10V. IC = 1omA, IB1 = IB2= 1mA. Rise time t(r) 64 ns Storage time t(s) 1256 ns Fall time t(f) 140 ns |
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