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Document Number: 91045

4

S-Pending-Rev. A, 19-Jun-08

IRF730A, SiHF730A

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

1

10

100

1000

1

10

100

1000

10000

100000

Coss

Crss

Ciss

f = 1 MHZ

0

25

0

4

8

12

16

20

5

10

15

20

ID = 5.5 A

FOR TEST CIRCUIT

SEE FIGURE 13

0.1

1

10

100

0.4

0.8

1.2

VGS = 0 V

0.6

1.0

TJ = 150 °C

TJ = 25 °C

0.1

1

10

100

10

100

1000

10 us

100 us

1 ms

10 ms

OPERATION IN THIS AREA LIMITED

BY RDS(on)

TC = 25 °C

TJ = 150 °C

Single Pulse