Document Number: 91033

www.vishay.com

S-Pending-Rev. A, 19-Jun-08

3

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Dynamic

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

8.0

A

--

32

Body Diode Voltage

--

1.3

V

Body Diode Reverse Recovery Time

-

130

200

ns

Body Diode Reverse Recovery Charge

-

650

980

nC

Forward Turn-On Time

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

D

S

G

S

D

G

91033_01

Bottom

Top

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

4.5 V

110

10

1

0.1

0.1

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

91033_02

4.5 V

110

10

1

0.1

0.1