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SIHF840ASTR Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHF840ASTR Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91066 www.vishay.com S-81412-Rev. A, 07-Jul-08 1 Power MOSFET IRF840AS, IRF840AL, SiHF840AS, SiHF840AL Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge • Full Bridge Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 16 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12). c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRF840A/SiH840A data and test conditions. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.85 Qg (Max.) (nC) 38 Qgs (nC) 9.0 Qgd (nC) 18 Configuration Single N-Channel MOSFET G D S G D S D2PAK (TO-263) I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF840ASPbF IRF840ASTRLPbFa IRF840ASTRRPbFa IRF840ALPbF SiHF840AS-E3 SiHF840ASTL-E3a SiHF840ASTR-E3a SiHF840AL-E3 SnPb IRF840AS IRF840ASTRLa IRF840ASTRRa IRF840AL SiHF840AS SiHF840ASTLa SiHF840ASTRa SiHF840AL ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0 A TC = 100 °C 5.1 Pulsed Drain Currenta IDM 32 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 510 mJ Repetitive Avalanche Currenta IAR 8.0 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W TA = 25 °C 3.1 Peak Diode Recovery dV/dtc, e dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Temperature for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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