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80RIA40MPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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80RIA40MPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94392 2 Revision: 11-Aug-08 80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 80 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 80 A 85 °C Maximum RMS on-state current IT(RMS) DC at 75 °C case temperature 125 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 1900 t = 8.3 ms 1990 t = 10 ms 100 % VRRM reapplied 1600 t = 8.3 ms 1675 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 18 kA2s t = 8.3 ms 16 t = 10 ms 100 % VRRM reapplied 12.7 t = 8.3 ms 11.7 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 180.5 kA2 √s Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.99 V High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ = TJ maximum 1.13 Low level value of on-state slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 2.29 m Ω High level value of on-state slope resistance rt2 (I > π x I T(AV)), TJ = TJ maximum 1.84 Maximum on-state voltage VTM Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 200 mA Typical latching current IL 400 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber 0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, t p = 6 µs, tr = 0.5 µs Per JEDEC standard RS-397, 5.2.2.6. 300 A/µs Typical delay time td Gate pulse: 10 V, 15 Ω source, t p = 6 µs, tr = 0.1 µs, Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C 1 µs Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, t p = 500 µs 110 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C exponential to 67 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C rated VDRM/VRRM applied 15 mA |
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