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SIHFBC30AS-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFBC30AS-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91109 www.vishay.com S-81412-Rev. A, 07-Jul-08 1 Power MOSFET IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 46 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12). c. ISD ≤ 3.6 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBC30A/SiHFBC30A data and test conditions. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRFBC30ASPbF IRFBC30ASTRLPbFa IRFBC30ASTRRPbFa IRFBC30ALPbF SiHFBC30AS-E3 SiHFBC30ASTL-E3a SiHFBC30ASTR-E3a SiHFBC30AL-E3 SnPb IRFBC30AS IRFBC30ASTRLa IRFBC30ASTRRa IRFBC30AL SiHFBC30AS SiHFBC30ASTLa SiHFBC30ASTRa SiHFBC30AL ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.6 A TC = 100 °C 2.3 Pulsed Drain Currenta, e IDM 14 Linear Derating Factor 0.69 W/°C Single Pulse Avalanche Energyb EAS 290 mJ Avalanche Currenta IAR 3.6 A Repetiitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TC = 25 °C PD 74 W Peak Diode Recovery dV/dtc, e dV/dt 7.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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