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SIHFBC40S Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFBC40S Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91116 2 S-Pending-Rev. A, 23-Jun-08 IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12). c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBC40/SiHFBC40 data and test conditions. Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA -40 °C/W Maximum Junction-to-Case RthJC -1.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 100 µA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.7 Ab -- 1.2 Ω Forward Transconductance gfs VDS = 100 V, ID = 3.7 Ab 4.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c - 1300 - pF Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss -30 - Total Gate Charge Qg VGS = 10 V ID = 6.2 A, VDS = 3600 V, see fig. 6 and 13b, c -- 60 nC Gate-Source Charge Qgs -- 8.3 Gate-Drain Charge Qgd -- 30 Turn-On Delay Time td(on) VDD = 300 V, ID = 6.2 A, RG = 9.1 Ω, RD = 47 Ω,VGS = 10 V, see fig. 10b, c -13 - ns Rise Time tr -18 - Turn-Off Delay Time td(off) -55 - Fall Time tf -20 - Internal Source Inductance LS Between lead, and center of die contact - 7.5 - nH |
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