ENA1000 datasheet(3/4 Pages) SANYO

Part #	ENA1000

Description	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

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MCH3475

No. A1000-3/4

IS -- VSD

⏐yfs⏐ -- ID

Drain Current, ID -- A

Diode Forward Voltage, VSD -- V

SW Time -- ID

Ciss, Coss, Crss -- VDS

A S O

VGS -- Qg

Drain-to-Source Voltage, VDS -- V

Total Gate Charge, Qg -- nC

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

0

0.2

0.6

1.0

0.4

0.8

2.0

1.4

1.2

1.6

1.8

0

1

2

7

5

4

3

9

8

6

10

IT13115

IT13116

2

3

5

7

2

3

5

7

2

3

5

7

0.1

1.0

10

0.01

2

23

5 7

23

5 7

1.0

2

35 7 10

0.1

Operation in this

area is limited by RDS(on).

100ms

100

µs

10ms

DC

operation

(T

a=25

°C

)

1ms

35

VDS=10V

ID=1.8A

IDP=7.2A

ID=1.8A

IT13111

7

1.0

10

5

3

2

5

3

IT13113

23

5

0.1

1.0

35

2

7

td(on)

td(off)

tf

tr

VDD=15V

VGS=10V

0.001

1.0

0.01

23

5

7

2

0.1

35

7

2

1.0

35

7

2

7

5

3

2

3

0.1

0.01

2

7

5

3

VDS=10V

25°

C

Ta=

--25

°C

75°

C

010

30

15

20

525

100

10

5

3

7

5

7

2

3

2

IT13114

Ciss

Coss

Crss

f=1MHz

IT13112

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1.0

7

5

3

2

7

5

3

2

7

5

3

2

3

2

VGS=0V

PW

≤10

µs

Ta=25

°C

Single pulse

Mounted on a ceramic board (900mm2

✕0.8mm)

RDS(on) -- Ta

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

Ambient Temperature, Ta --

°C

IT13110

02

4

6

8

16

10

12

14

IT13109

390

90

150

120

180

240

300

210

270

330

360

390

60

90

150

120

180

240

300

210

270

330

360

Ta=25

°C

--60

--40

--20

0

20

40

60

80

100

120

140

160

VGS

=10V

, ID

=0.9A

V GS

=4V

, I D

=0.5A

ID=0.5A

0.9A

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