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ENA1017 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ENA1017
Description  P-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ENA1017 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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MCH6331
No. A1017-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=--10V, f=1MHz
250
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
65
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
46
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
5.4
ns
Rise Time
tr
See specified Test Circuit.
12
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
26
ns
Fall Time
tf
See specified Test Circuit.
19
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--3.5A
5.0
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--3.5A
1.0
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--3.5A
1.2
nC
Diode Forward Voltage
VSD
IS=--3.5A, VGS=0V
--0.86
--1.5
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7022A-009
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
2.0
0.3
0.65
0.15
0 to 0.02
65
4
12
3
65
4
12
3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --1.5A
RL=10Ω
VDD= --15V
VOUT
MCH6331
VIN
0V
--10V
VIN
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
0
--0.5
--1.0
--3.0
--2.5
--2.0
--1.5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--0.1
--0.3
--0.5
--0.7
--0.9
IT13185
0
--1.0
--0.5
--1.5
--3.5
--2.5
--2.0
--3.0
0
--1
--2
--3
--4
IT13186
--3.0V
--3.5V
VDS= --10V
VGS= --2.5V


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