ENA1346 datasheet(2/4 Pages) SANYO

Part #	ENA1346

Description	PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

PCP1103

No. A1346-2/4

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB= -30V, IE=0A

-0.1

μA

Emitter Cutoff Current

IEBO

VEB= -4V, IC=0A

-0.1

μA

DC Current Gain

hFE

VCE= -2V, IC= -100mA

200

560

Gain-Bandwidth Product

fT

VCE= -10V, IC= -300mA

450

MHz

Output Capacitance

Cob

VCB= -10V, f=1MHz

9

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC= -0.75A, IB= -15mA

-250

-375

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC= -0.75A, IB= -15mA

-0.85

-1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC= -10μA, IE=0A

-30

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC= -1mA, RBE=∞

-30

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE= -10μA, IC=0A

-5

V

Turn-On Time

ton

See speciﬁed Test Circuit.

35

ns

Storage Time

tstg

See speciﬁed Test Circuit.

115

ns

Fall Time

tf

See speciﬁed Test Circuit.

30

ns

Package Dimensions

Switching Time Test Circuit

unit : mm (typ)

7007A-004

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

1.5

0.5

0.4

3.0

4.5

1.6

0.4

12

3

1.5

0.75

To p View

Bo tto m View

RB

VCC= --12V

IC=--20IB1=20IB2=--0.75A

+

50Ω

INPUT

OUTPUT

820μF

PW=50μs

IB1

D.C.≤1%

IB2

RL

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

--50mA

--40mA

--30mA

--20mA

--2.0

--1.4

--1.2

--1.6

--1.8

--1.0

--0.4

--0.2

--0.6

--0.8

0

--0.4

--0.8 --0.9 --1.0

--0.2

--0.6

--0.3

--0.7

--0.1

--0.5

IB=0mA

IT14106

--2mA

--4mA

--6mA

--10mA

--8mA

VCE= --2V

--1.6

--1.2

--0.6

--0.8

--1.4

--1.0

--0.2

--0.4

0

--0.2

--0.4

--0.6

--0.8

--1.2

--1.0

IT14107

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