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ENA0953 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ENA0953
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ENA0953 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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CPH3449
No. A0953-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9
ns
Rise Time
tr
See specified Test Circuit.
20
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
23
ns
Fall Time
tf
See specified Test Circuit.
29
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=1.5A
2.2
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=1.5A
0.52
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=1.5A
0.52
nC
Diode Forward Voltage
VSD
IS=1.5A, VGS=0V
0.9
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7015A-004
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
ID -- VDS
ID -- VGS
RDS(on) -- Ta
RDS(on) -- VGS
IT06104
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
100
200
300
400
500
50
150
250
350
450
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT06102
02468
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--60
--40
--20
0
20
40
60
80
100
120
140
160
0
0
0.5
1.0
1.5
2.0
2.5
IT06103
IT06105
100
200
300
400
500
50
150
250
350
450
0
VGS=1.0V
1.5V
VDS=10V
Ta=25
°C
VGS
=2.5V
, ID
=400mA
VGS
=4V
, ID=800mA
800mA
ID=400mA
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
2.9
0.05
0.4
0.15
2
1
3
0.95
PW=10µs
D.C.≤1%
P.G
50Ω
G
S
D
ID=800mA
RL=18.75Ω
VDD=15V
VOUT
CPH3449
VIN
4V
0V
VIN


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