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SIHFI9520G-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SIHFI9520G-E3
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHFI9520G-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 91162
2
S-81361-Rev. A, 07-Jul-08
IRFI9520G, SiHFI9520G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-65
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-4.1
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
- 100
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.10
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V
-
-
- 100
µA
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
Drain-Source On-State Resistance
RDS(on)
VGS = - 10 V
ID = - 3.1 Ab
-
-
0.60
Ω
Forward Transconductance
gfs
VDS = - 50 V, ID = - 3.1 Ab
1.9
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
-
390
-
pF
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-45
-
Drain to Sink Capacitance
C
f = 1.0 MHz
-
12
-
Total Gate Charge
Qg
VGS = - 10 V
ID = - 6.8 A, VDS = - 80 V,
see fig. 6 and 13b
--
18
nC
Gate-Source Charge
Qgs
--
3.0
Gate-Drain Charge
Qgd
--
9.0
Turn-On Delay Time
td(on)
VDD = - 50 V, ID = - 6.8 A,
RG = 18 Ω, RD= 7.1 Ω,
see fig. 10b
-9.6
-
ns
Rise Time
tr
-29
-
Turn-Off Delay Time
td(off)
-21
-
Fall Time
tf
-25
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
- 5.2
A
Pulsed Diode Forward Currenta
ISM
--
- 21
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 5.2 A, VGS = 0 Vb
--
- 6.3
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = - 6.8 A, dI/dt = 100 A/µsb
-
100
200
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.33
0.66
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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