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IRFIB7N50L Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFIB7N50L Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91177 www.vishay.com S-Pending-Rev. A, 24-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFIB7N50L, SiHFIB7N50L Vishay Siliconix FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Reqirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 14). c. ISD ≤ 6.8 A, dI/dt ≤ 650 A/µs, VDD ≤ VDS, dV/dt = 24 V/ns, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration Single N-Channel MOSFET G D S S D G TO-220 FULLPAK RoHS COMPLIANT ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFIB7N50LPbF SiHFIB7N50L-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 6.8 A TC = 100 °C 4.3 Pulsed Drain Currenta IDM 27 Linear Derating Factor 0.37 W/°C Single Pulse Avalanche Energyb EAS 550 mJ Avalanche Currenta IAR 6.8 A Repetitive Avalanche Energya EAR 4.6 mJ Maximum Power Dissipation TC = 25 °C PD 46 W Peak Diode Recovery dV/dtc dV/dt 24 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m |
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