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SIHFIB7N50L Datasheet(PDF) 8 Page - Vishay Siliconix |
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SIHFIB7N50L Datasheet(HTML) 8 Page - Vishay Siliconix |
8 / 9 page www.vishay.com Document Number: 91177 8 S-Pending-Rev. A, 24-Jun-08 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Fig. 17 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91177. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + + - - - * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit RG VDD • dV/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer |
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