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SIHFIBF30G-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFIBF30G-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91186 www.vishay.com S-Pending-Rev. A, 16-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFIBF30G, SiHFIBF30G Vishay Siliconix FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 115 µH, RG = 25 Ω, IAS = 1.9 A (see fig. 12). c. ISD ≤ 3.6 A, dI/dt ≤ 70 A/µs, VDD ≤ 600, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 900 RDS(on) (Ω)VGS = 10 V 3.7 Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Single N-Channel MOSFET G D S S D G TO-220 FULLPAK Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFIBF30GPbF SiHFIBF30G-E3 SnPb IRFIBF30G SiHFIBF30G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 900 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 1.9 A TC = 100 °C 1.2 Pulsed Drain Currenta IDM 7.6 Linear Derating Factor 0.28 W/°C Single Pulse Avalanche Energyb EAS 220 mJ Repetitive Avalanche Currenta IAR 1.9 A Repetitive Avalanche Energya EAR 3.5 mJ Maximum Power Dissipation TC = 25 °C PD 35 W Peak Diode Recovery dV/dtc dV/dt 1.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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