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IRFL214TRPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFL214TRPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91194 www.vishay.com S-81393-Rev. A, 07-Jul-08 1 Power MOSFET IRFL214, SiHFL214 Vishay Siliconix FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω)VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single N-Channel MOSFET G D S SOT-223 Available RoHS* COMPLIANT ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free IRFL214PbF IRFL214TRPbFa SiHFL214-E3 SiHFL214T-E3a SnPb IRFL214 IRFL214TRa SiHFL214 SiHFL214Ta ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 0.79 A TC = 100 °C 0.50 Pulsed Drain Currenta IDM 6.3 Linear Derating Factor 0.025 W/°C Linear Derating Factor (PCB Mount)e 0.017 Single Pulse Avalanche Energyb EAS 50 mJ Repetitive Avalanche Currenta IAR 0.79 A Repetitive Avalanche Energya EAR 0.31 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.0 * Pb containing terminations are not RoHS compliant, exemptions may apply |
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