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SIHFP460A-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFP460A-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91234 2 S-81360-Rev. A, 28-Jul-08 IRFP460A, SiHFP460A Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.45 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.61 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12 Ab -- 0.27 Ω Forward Transconductance gfs VDS = 50 V, ID = 12 Ab 11 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 3100 - pF Output Capacitance Coss - 480 - Reverse Transfer Capacitance Crss -18 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz 4430 VDS = 400 V, f = 1.0 MHz 130 Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc 140 Total Gate Charge Qg VGS = 10 V ID = 20 A, VDS = 400 V, see fig. 6 and 13b - - 105 nC Gate-Source Charge Qgs -- 26 Gate-Drain Charge Qgd -- 42 Turn-On Delay Time td(on) VDD = 250 V, ID = 20 A, RG = 4.3 Ω, RD = 13 Ω, see fig. 10b -18 - ns Rise Time tr -55 - Turn-Off Delay Time td(off) -45 - Fall Time tf -39 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 20 A Pulsed Diode Forward Currenta ISM -- 80 Body Diode Voltage VSD TJ = 25 °C, IS = 20A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µsb - 480 710 ns Body Diode Reverse Recovery Charge Qrr -5.0 7.5 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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