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3HN04SS Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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3HN04SS Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page 3HN04SS No. A1015-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr See specified Test Circuit. 17.5 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 65 ns Fall Time tf See specified Test Circuit. 41 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 1.68 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.54 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.12 nC Diode Forward Voltage VSD IS=300mA, VGS=0V 0.86 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7029-003 0.25 0.2 1.4 0.45 1 3 2 0.1 2 3 1 Top View Bottom View 1 : Gate 2 : Source 3 : Drain SANYO : SSFP PW=10μs D.C.≤1% P.G 50Ω G S D ID=300mA RL=50Ω Rg VDD=15V VOUT 3HN04SS VIN 10V 0V VIN Rg=1.2kΩ ID -- VDS ID -- VGS Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V 0.05 0.30 0.10 0.15 0.20 0.25 0 0 0.10 0.05 0.20 0.15 0.25 0.30 0 1.0 0.8 0.6 0.1 0.2 0.4 0.9 0.7 0.3 0.5 IT10821 0 1.0 0.5 2.0 3.0 4.0 1.5 2.5 3.5 4.5 IT10822 VGS=3V VDS=10V |
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