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IL420 Datasheet(PDF) 3 Page - Vishay Siliconix |
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IL420 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 83629 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.6, 18-Jan-08 3 IL420/IL4208 Optocoupler, Phototriac Output, High dV/dt, Low Input Current Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.16 1.35 V Reverse current VR = 6.0 V IR 0.1 10 µA Input capacitance VF = 0 V, f = 1.0 MHz CIN 40 pF Thermal resistance, junction to ambient Rthja 750 °C/W OUTPUT Off-state voltage ID(RMS) = 70 µA IL420 VD(RMS) 424 460 V IL4208 VD(RMS) 565 V Repetitive peak off-state voltage IDRM = 100 µA IL420 VDRM 600 V IL4208 VDRM 800 V Off-state current VD = VDRM, Tamb = 100 °C IBD 10 100 µA On-state voltage IT = 300 mA VTM 1.7 3.0 V On-current PF = 1.0, VT(RMS) = 1.7 V ITM 300 mA Surge (non-repetitive), on-state current f = 50 Hz ITSM 3.0 A Holding current IH 65 500 µA Latching current VT = 2.2 V IL 5.0 mA LED trigger current VAK = 5.0 V IFT 1.0 2.0 Trigger current temperature gradient ΔI FT/ΔTj 7.0 14 µA/°C Critical rate of rise off-state voltage VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10000 V/µs VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5000 V/µs Critical rate of rise of voltage at current commutation VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms, Tj = 25 °C dV/dtcrq 10000 V/µs VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms, Tj = 80 °C dV/dtcrq 5000 V/µs Critical rate of rise of on-state dI/dtcr 8.0 A/µs Thermal resistance, junction to ambient Rthja 150 °C/W COUPLER Critical rate of rise of coupled input/output voltage IT = 0 A, VRM = VDM = VD(RMS) dV/dt 5000 V/µs Capacitance (input to output) f = 1.0 MHz, VIO = 0 V CIO 0.8 pF Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time VRM = VDM = VD(RMS) ton 35 µs PF = 1.0, IT = 300 mA toff 50 µs |
Similar Part No. - IL420_08 |
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Similar Description - IL420_08 |
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