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MBR735 Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR735 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 93456 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 22-Aug-08 1 Schottky Rectifier, 7.5 A MBR7.. Series Vishay High Power Products FEATURES • 150 °C TJ operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for industrial level DESCRIPTION The MBR7.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 7.5 A VR 35 to 45 V IRM 15 mA at 125 °C Anode 1 3 Cathode TO-220AC Base cathode 2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 7.5 A VRRM 35 to 45 V IFSM tp = 5 µs sine 690 A VF 7.5 Apk, TJ = 125 °C 0.57 V TJ Range - 65 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL MBR735 MBR745 UNITS Maximum DC reverse voltage VR 35 45 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) TC = 131 °C, rated VR 7.5 A Non-repetitive peak surge current IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 690 A Surge applied at rated load condition half wave single phase 60 Hz 150 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 3.5 mH 7 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 2A |
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