VEMT4700 datasheet(2/7 Pages) VISHAY

Part #	VEMT4700

Description	Silicon NPN Phototransistor, RoHS Compliant

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 81501

532

Rev. 1.3, 04-Sep-08

VEMT4700

Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant

Note

Tamb = 25 °C, unless otherwise specified

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Note

Tamb = 25 °C, unless otherwise specified

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

- 40 to + 100

°C

Storage temperature range

Tstg

- 40 to + 100

°C

Soldering temperature

Acc. reflow solder profile fig. 10

Tsd

260

°C

Thermal resistance junction/ambient

Soldered on PCB with pad dimensions: 4 mm x 4 mm

RthJA

400

K/W

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

020

40

60

80

0

25

50

75

100

125

Tamb - Ambient Temperature (°C)

100

20376

R

= 400 K/W

10

30

50

70

90

thJA

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Collector emitter breakdown voltage

IC = 1 mA

V(BR)CEO

70

V

Collector emitter dark current

VCE = 20 V, E = 0

ICEO

1

200

nA

Collector emitter capacitance

VCE = 5 V, f = 1 MHz, E = 0

CCEO

3pF

Collector light current

Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V

Ica

0.25

0.5

mA

Angle of half sensitivity

ϕ

± 60

deg

Wavelength of peak sensitivity

λ

p

850

nm

Range of spectral bandwidth

λ

0.1

450 to 1080

nm

Collector emitter saturation voltage

Ee = 1 mW/cm2, λ = 950 nm,

IC = 0.1 mA

VCEsat

0.15

0.3

V

Rise time, fall time

VS = 5 V, IC = 1 mA, λ = 950 nm,

RL = 1 kΩ

tr/tf

6µs

VS = 5 V, IC = 1 mA, λ = 950 nm,

RL = 100 Ω

tr/tf

2µs

Cut-off frequency

VS = 5 V, IC = 2 mA, RL = 100 Ω

fc

180

kHz

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