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IRFR9020PBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFR9020PBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 90350 www.vishay.com S-Pending-Rev. A, 10-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix FEATURES • Surface Mountable (Order As IRFR9020/SiHFR9020) • Straight Lead Option (Order As IRFU9020/SiHFU9020) • Repetitive Avalanche Ratings • Dynamic dV/dt Rating • Simple Drive Requirements • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. The Power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of Power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9020/SiHFR9020 is provided on 16mm tape. The straight lead option IRFR9020/SiHFR9020 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. Note a. See device orientation. PRODUCT SUMMARY VDS (V) - 50 RDS(on) (Ω)VGS = - 10 V 0.28 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single S G D P-Channel MOSFET DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR9020PbF IRFR9020TRPbFa IRFR9020TRLPbFa IRFU9020PbF SiHFR9020-E3 SiHFR9020T-E3a SiHFR9020TL-E3a SiHFU9020-E3 SnPb IRFR9020 IRFR9020TRa IRFR9020TRLa IRFU9020 SiHFR9020 SiHFR9020Ta SiHFR9020TLa SiHFU9020 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 50 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 9.9 A TC = 100 °C - 6.3 Pulsed Drain Currenta IDM - 40 Linear Derating Factor 0.33 W/°C Single Pulse Avalanche Energyb EAS 440 mJ Repetitive Avalanche Currenta IAR - 9.9 A Repetitive Avalanche Energya EAR 4.2 mJ * Pb containing terminations are not RoHS compliant, exemptions may apply |
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