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Document Number: 91349

2

S-Pending-Rev. A, 10-Jun-08

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

d. 0.063" (1.6 mm) from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

Maximum Power Dissipation

42

W

dV/dt

5.8

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-

-

110

°C/W

Case-to-Sink

-1.7

-

Maximum Junction-to-Case (Drain)

--

3.0

PARAMETER

SYMBOL

LIMIT

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

- 50

-

-

V

Gate-Source Threshold Voltage

- 2.0

-

- 4.0

V

Gate-Source Leakage

-

-

± 500

nA

Zero Gate Voltage Drain Current

-

-

250

µA

-

-

1000

Drain-Source On-State Resistance

-

0.28

0.33

Ω

Forward Transconductance

2.3

3.5

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 9

-

490

-

pF

Output Capacitance

-

320

-

Reverse Transfer Capacitance

-70

-

Total Gate Charge

rating, see fig. 16

(Independent operating

temperature)

-9.4

14

nC

Gate-Source Charge

-4.3

6.5

Gate-Drain Charge

-4.3

6.5

Turn-On Delay Time

(Independent operating temperature)

-8.2

12

ns

Rise Time

-57

66

Turn-Off Delay Time

-12

18

Fall Time

-25

38

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact.

-4.5

-

nH

Internal Source Inductance

-7.5

-

D

S

G