Document Number: 91287

www.vishay.com

S-Pending-Rev. A, 22-Jul-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFS9N60A, SiHFS9N60A

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

APPLICABLE OFF LINE SMPS TOPOLOGIES

• Active Clamped Forward

• Main Switch

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

600

0.75

49

13

20

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRFS9N60APbF

SiHFS9N60A-E3

SnPb

IRFS9N60A

SiHFS9N60A

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 30

Continuous Drain Current

9.2

A

5.8

37

Linear Derating Factor

1.3

W/°C

290

mJ

9.2

A

17

mJ

Maximum Power Dissipation

170

W

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply