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SIHFS9N60ATL-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHFS9N60ATL-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91287 4 S-Pending-Rev. A, 22-Jul-08 IRFS9N60A, SiHFS9N60A Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 0 400 800 1200 1600 2000 2400 1 10 100 1000 DS V , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd iss oss rss 0 10 20 30 40 50 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 9.2A V = 120V DS V = 300V DS V = 480V DS 0.1 1 10 100 0.2 0.5 0.7 1.0 1.2 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 0.1 1 10 100 1000 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C V, Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms |
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