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SIHFZ48S-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SIHFZ48S-E3
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHFZ48S-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 90377
www.vishay.com
S-Pending-Rev. A, 23-Jul-08
WORK-IN-PROGRESS
1
Power MOSFET
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Surface Mount (IRFZ48S/SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest
power
capability
and
the
lowest
possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to 2
W in a typical surface mount application.
The through-hole version (IRFZ48L/SiHFZ48L) is available
for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 22 µH, RG = 25 Ω, IAS = 72 A (see fig. 12).
c. ISD ≤ 72 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ48/SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)VGS = 10 V
0.018
Qg (Max.) (nC)
110
Qgs (nC)
29
Qgd (nC)
36
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRFZ48SPbF
-
IRFZ48LPbF
SiHFZ48S-E3
-
SiHFZ48L-E3
SnPb
IRFZ48S
IRFZ48STRL
-
SiHFZ48S
SiHFZ48STL
-
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Currentf
VGS at 10 V
TC = 25 °C
ID
50
A
TC = 100 °C
50
Pulsed Drain Currenta, e
IDM
290
Linear Derating Factor
1.3
W/°C
Single Pulse Avalanche Energyb, e
EAS
100
mJ
Maximum Power Dissipation
TC = 25 °C
PD
190
W
TA = 25 °C
3.7
Peak Diode Recovery dV/dtc, e
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)d
for 10 s
300
* Pb containing terminations are not RoHS compliant, exemptions may apply


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