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SIHFZ48S-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFZ48S-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 90377 www.vishay.com S-Pending-Rev. A, 23-Jul-08 WORK-IN-PROGRESS 1 Power MOSFET IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix FEATURES • Advanced Process Technology • Surface Mount (IRFZ48S/SiHFZ48S) • Low-Profile Through-Hole (IRFZ48L/SiHFZ48L) • 175 °C Operating Temperature • Fast Switching • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. The through-hole version (IRFZ48L/SiHFZ48L) is available for low-profile applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, Starting TJ = 25 °C, L = 22 µH, RG = 25 Ω, IAS = 72 A (see fig. 12). c. ISD ≤ 72 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Uses IRFZ48/SiHFZ48 data and test conditions. f. Calculated continuous current based on maximum allowable junction temperature. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRFZ48SPbF - IRFZ48LPbF SiHFZ48S-E3 - SiHFZ48L-E3 SnPb IRFZ48S IRFZ48STRL - SiHFZ48S SiHFZ48STL - ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currentf VGS at 10 V TC = 25 °C ID 50 A TC = 100 °C 50 Pulsed Drain Currenta, e IDM 290 Linear Derating Factor 1.3 W/°C Single Pulse Avalanche Energyb, e EAS 100 mJ Maximum Power Dissipation TC = 25 °C PD 190 W TA = 25 °C 3.7 Peak Diode Recovery dV/dtc, e dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 * Pb containing terminations are not RoHS compliant, exemptions may apply |
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