New Product

V40100G, VF40100G, VB40100G & VI40100G

Vishay General Semiconductor

Document Number: 88970

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

and TO-262AA package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 20 A

100 V

200 A

0.67 V

150 °C

TO-220AB

1

2

3

1

K

2

3

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

V40100G

VF40100G

VI40100G

VB40100G

TMBS

®

ITO-220AB

1

2

3

PARAMETER

SYMBOL

V40100G

VF40100G

VB40100G

VI40100G

UNIT

Maximum repetitive peak reverse voltage

100

V

Maximum average forward rectified current

(Fig. 1)

per device

per diode

40

20

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

200

A

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 min

1500

V

Operating junction and storage temperature range

- 40 to + 150

°C