VB40120C datasheet(3/5 Pages) VISHAY

Part #	VB40120C

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

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Manufacturer	VISHAY [Vishay Siliconix]

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V40120C, VF40120C, VB40120C & VI40120C

Vishay General Semiconductor

Document Number: 88937

Revision: 19-May-08

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PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

Instantaneous Forward Voltage (V)

0

0.2

0.4

0.8

1.2

1.4

100

10

1

0.1

T

A = 100 °C

T

A = 25 °C

0.6

1.0

T

A = 150 °C

T

A = 125 °C

10

20

30

40

50

60

70

80

90

100

1

0.1

0.01

0.001

100

10

Percent of Rated Peak Reverse Voltage (%)

T

A = 150 °C

T

A = 25 °C

T

A = 100 °C

T

A = 125 °C

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

J = 25 °C

f = 1.0 MHz

V

sig = 50 mVp-p

100

Figure 6. Typical Transient Thermal Impedance Per Diode

Figure 7. Typical Transient Thermal Impedance Per Diode

10

1

0.1

0.01

0.1

1

10

100

t - Pulse Duration (s)

V(B,I)40120C

Junction to Case

10

1

0.1

0.01

0.1

1

10

100

t - Pulse Duration (s)

VF40120C

Junction to Case

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VB40120C Datasheet(PDF) 3 Page - Vishay Siliconix

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