V60200PG datasheet(2/4 Pages) VISHAY

Part #	V60200PG

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

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Manufacturer	VISHAY [Vishay Siliconix]

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V60200PG

Vishay General Semiconductor

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Document Number: 89049

Revision: 14-Oct-08

2

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

IR = 1.0 mA

TA = 25 °C

VBR

200 (minimum)

-

V

Instantaneous forward voltage per diode (1)

IF = 5 A

IF = 15 A

IF = 30 A

TA = 25 °C

VF

0.69

0.90

1.28

-

1.48

V

IF = 5 A

IF = 15 A

IF = 30 A

TA = 125 °C

0.52

0.63

0.73

-

0.81

Reverse current per diode (2)

VR = 180 V

TA = 25 °C

TA = 125 °C

IR

3.4

4.6

-

µA

mA

VR = 200 V

TA = 25 °C

TA = 125 °C

-

7.5

200

20

µA

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60200PG

UNIT

Typical thermal resistance per diode

RθJC

1.5

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

V60200PG-E3/45

6.06

45

30/tube

Tube

Figure 1. Forward Derating Curve

50

60

40

30

20

10

0

025

50

75

100

125

150

Case Temperature (°C)

Resistive or Inductive Load

70

Mounted on Specific Heatsink

Figure 2. Forward Power Loss Characteristics Per Diode

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

0

4

12

16

20

32

4

8

12

16

20

28

36

Average Forward Current (A)

8

24

28

24

32

D = t

p/T

t

p

T

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