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SI1013R-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1013R-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 71167 S-81444-Rev. C, 23-Jun-08 Vishay Siliconix Si1013R/X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 1 ± 2 µA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V - 0.3 - 100 nA VDS = - 16 V, VGS = 0 V, TJ = 85 °C - 5 µA On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V - 700 mA Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 350 mA 0.8 1.2 Ω VGS = - 2.5 V, ID = - 300 mA 1.2 1.6 VGS = - 1.8 V, ID = - 150 mA 1.8 2.7 Forward Transconductancea gfs VDS= - 10 V, ID = - 250 mA 0.4 S Diode Forward Voltagea VSD IS = - 150 mA, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA 1500 pC Gate-Source Charge Qgs 150 Gate-Drain Charge Qgd 450 Turn-On Delay Time td(on) VDD = - 10 V, RL = 47 Ω ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω 5 ns Rise Time tr 9 Turn-Off Delay Time td(off) 35 Fall Time tf 11 Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 thru 3 V 2 V VDS - Drain-to-Source Voltage (V) 1.8 V 2.5 V Transfer Characteristics 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) |
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