SI1970DH-T1-E3 datasheet(1/7 Pages) VISHAY

Part #	SI1970DH-T1-E3

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si1970DH

New Product

Document Number: 74343

S-62441-Rev. A, 27-Nov-06

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

APPLICATIONS

•

Load switch for portable applications

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

a

Qg (Typ)

30

0.225 at VGS = 4.5 V

1.3a

1.15 nC

0.345 at VGS = 2.5 V

1.3a

Marking Code

CD

XX

Lot Traceability

and Date Code

Part # Code

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

S1

G1

D2

D1

G2

S2

Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

G2

D2

S2

N-Channel MOSFET

G1

D1

S1

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 220 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

1.3a

A

TC = 70 °C

1.3a

TA = 25 °C

1.3a

TA = 70 °C

1.1

Pulsed Drain Current

IDM

4

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.0

TA = 25 °C

0.61c

Maximum Power Dissipation

TC = 25 °C

PD

1.25

W

TC = 70 °C

0.8

TA = 25 °C

0.74b, c

TA = 70 °C

0.47b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 5 sec

RthJA

130

170

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

80

100

RoHS

COMPLIANT

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SI1970DH-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

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