SI2323DS-T1 datasheet(3/6 Pages) VISHAY

Part #	SI2323DS-T1

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 6 page

Document Number: 72024

S-81954-Rev. C, 25-Aug-08

www.vishay.com

3

Vishay Siliconix

Si2323DS

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

4

8

12

16

20

012345

VGS = 5 thru 2.5 V

1 V

1.5 V

VDS - Drain-to-Source Voltage (V)

2 V

0.00

0.03

0.06

0.09

0.12

0.15

0

4

8

121620

VGS = 4.5 V

VGS = 2.5 V

ID - Drain Current (A)

VGS = 1.8 V

0

1

2

3

4

5

0369

12

15

VDS = 6 V

ID = 4.7 A

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

25 °C

125 °C

VGS - Gate-to-Source Voltage (V)

TC = - 55 °C

0

300

600

900

1200

1500

1800

048

12

16

20

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 4.7 A

TJ - Junction Temperature (°C)

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SI2323DS-T1 Datasheet(PDF) 3 Page - Vishay Siliconix

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