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SI2327DS-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI2327DS-T1-E3
Description  P-Channel 200-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2327DS-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Si2327DS
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73240
S-42448—Rev. A, 10-Jan-05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−200
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−2.5
−4.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −200 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −200 V, VGS = 0 V, TJ = 55_C
−10
mA
On-State Drain Currenta
ID(on)
VDS v −15 V, VGS = 10 V
−1.0
A
Drain Source On Resistancea
rDS( )
VGS = −10 V, ID = −0.5 A
1.9
2.35
W
Drain-Source On-Resistancea
rDS(on)
VGS = −6.0 V, ID = −0.5 A
1.96
2.45
W
Forward Transconductancea
gfs
VDS = −15 V, ID = −0.5 A
1.8
S
Diode Forward Voltage
VSD
IS = −1.0 A, VGS = 0 V
0.85
−1.2
V
Dynamicb
Total Gate Charge
Qg
V
100 V V
10 V
8.0
12
Gate-Source Charge
Qgs
VDS = −100 V, VGS = 10 V
ID ^ −0.5 A
1.3
nC
Gate-Drain Charge
Qgd
ID ^ −0.5 A
2.5
Gate Resistance
Rg
f = 1.0 MHz
8.0
W
Input Capacitance
Ciss
340
510
Output Capacitance
Coss
VDS = −25 V, VGS = 0, f = 1 MHz
25
pF
Reverse Transfer Capacitance
Crss
DS
GS
14
p
Switchingc
Turn-On Time
td(on)
8
12
Turn-On Time
tr
VDD = −100 V, RL = 100 W
ID ^ −10 A VGEN = −10 V
11
17
ns
Turn Off Time
td(off)
ID ^ −1.0 A, VGEN = −10 V
Rg = 6 W
16
25
ns
Turn-Off Time
tf
g
11
17
Body Diode Reverse Recovery Charge
Qrr
IF = 0.5 A, di/dt = 100 A/ms
140
200
nC
Notes
a.
Pulse test: PW v300 ms duty cycle v2%.
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.


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