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SI2327DS-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI2327DS-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si2327DS Vishay Siliconix New Product www.vishay.com 2 Document Number: 73240 S-42448—Rev. A, 10-Jan-05 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −200 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −2.5 −4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −200 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −200 V, VGS = 0 V, TJ = 55_C −10 mA On-State Drain Currenta ID(on) VDS v −15 V, VGS = 10 V −1.0 A Drain Source On Resistancea rDS( ) VGS = −10 V, ID = −0.5 A 1.9 2.35 W Drain-Source On-Resistancea rDS(on) VGS = −6.0 V, ID = −0.5 A 1.96 2.45 W Forward Transconductancea gfs VDS = −15 V, ID = −0.5 A 1.8 S Diode Forward Voltage VSD IS = −1.0 A, VGS = 0 V 0.85 −1.2 V Dynamicb Total Gate Charge Qg V 100 V V 10 V 8.0 12 Gate-Source Charge Qgs VDS = −100 V, VGS = 10 V ID ^ −0.5 A 1.3 nC Gate-Drain Charge Qgd ID ^ −0.5 A 2.5 Gate Resistance Rg f = 1.0 MHz 8.0 W Input Capacitance Ciss 340 510 Output Capacitance Coss VDS = −25 V, VGS = 0, f = 1 MHz 25 pF Reverse Transfer Capacitance Crss DS GS 14 p Switchingc Turn-On Time td(on) 8 12 Turn-On Time tr VDD = −100 V, RL = 100 W ID ^ −10 A VGEN = −10 V 11 17 ns Turn Off Time td(off) ID ^ −1.0 A, VGEN = −10 V Rg = 6 W 16 25 ns Turn-Off Time tf g 11 17 Body Diode Reverse Recovery Charge Qrr IF = 0.5 A, di/dt = 100 A/ms 140 200 nC Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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