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SI3441BDV-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI3441BDV-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si3441BDV Vishay Siliconix www.vishay.com 2 Document Number: 72028 S-40424—Rev. C, 15-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.45 −0.85 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 70_C −5 mA On State Drain Currenta ID( ) VDS = −5 V, VGS = −4.5 V −10 A On-State Drain Currenta ID(on) VDS = −5 V, VGS = −2.5 V −4 A Drain Source On State Resistancea rDS( ) VGS = −4.5 V, ID = −3.3 A 0.070 0.090 W Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −2.9 A 0.098 0.130 W Forward Transconductancea gfs VDS = −10 V, ID = −3.3 A 8.0 S Diode Forward Voltagea VSD IS = −1.6 A, VGS = 0 V −0.8 −1.2 V Dynamicb Total Gate Charge Qg 5.2 8.0 Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −3.3 A 0.8 nC Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 15 25 Rise Time tr VDD = −10 V, RL = 10 W 55 85 Turn-Off Delay Time td(off) VDD = −10 V, RL = 10 W ID ^ −1.0 A, VGEN = −4.5 V, Rg = 6 W 30 45 ns Fall Time tf 40 60 Source-Drain Reverse Recovery Time trr IF = −1.6 A, di/dt = 100 A/ms 50 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4 8 12 16 20 0 1234 5 VGS = 4.5 thru 3.5 V TC = −55_C 125_C 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 1 V 2 V 3 V 2.5 V 1.5 V |
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