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Document Number: 69954

S-80430-Rev. A, 03-Mar-08

Vishay Siliconix

Si3459BDV

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

- 60

V

ΔV

- 65

mV/°C

ΔV

4

Gate-Source Threshold Voltage

- 1

- 3

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

- 1

µA

- 10

- 8

A

0.180

0.216

Ω

0.240

0.288

4S

Input Capacitance

350

pF

Output Capacitance

40

Reverse Transfer Capacitance

30

Total Gate Charge

7.7

12

nC

4.4

6.6

Gate-Source Charge

1.3

Gate-Drain Charge

2.5

Gate Resistance

f = 1 MHz

2

10

20

Ω

Turn-On Delay Time

45

68

ns

Rise Time

60

90

Turn-Off Delay Time

16

25

Fall Time

13

20

Turn-On Delay Time

510

Rise Time

12

20

Turn-Off Delay Time

18

30

Fall Time

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

- 2.9

A

Pulse Diode Forward Current

- 8

Body Diode Voltage

- 0.8

- 1.2

V

Body Diode Reverse Recovery Time

28

56

ns

Body Diode Reverse Recovery Charge

35

70

nC

Reverse Recovery Fall Time

23

ns

Reverse Recovery Rise Time

5