SI3499DV_08 datasheet(4/6 Pages) VISHAY

Part #	SI3499DV

Description	P-Channel 1.5-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si3499DV

Vishay Siliconix

New Product

www.vishay.com

4

Document Number: 73138

Pending—Rev. A, 18-Oct-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.1

0

24

40

8

16

Single Pulse Power

Time (sec)

32

10−3

10−2

1

10

600

10−1

10−4

100

−0.2

−0.1

0.0

0.1

0.2

0.3

0.4

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ − Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 360_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

100

600

10

10−1

10−2

TA = 25_C

Safe Operating Area

100

1

0.1

1

10

0.01

10

TC = 25_C

Single Pulse

*rDS(on) Limited

IDM Limited

BVDSS Limited

ID(on)

Limited

10 S

dc

1 S

100 mS

10 mS

1 mS

VDS − Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

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