FEATURES

D TrenchFETr Power MOSFETS

Si5435BDC

Vishay Siliconix

New Product

Document Number: 73137

S-41887—Rev. A, 18-Oct-04

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

−30

−5.9

−30

−4.4

1206-8 ChipFE

Tr

D

D

D

G

D

D

D

S

1

Bottom View

Marking Code

BJ

XXX

Lot Traceability

and Date Code

Part # Code

S

G

D

P-Channel MOSFET

Ordering Information:

Si5435BDC-T1—E3

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

−30

V

Gate-Source Voltage

"20

V

−5.9

−4.3

−4.3

−3.1

A

Pulsed Drain Current

−30

A

−2.1

−1.1

2.5

1.3

W

1.3

0.7

W

Operating Junction and Storage Temperature Range

−55 to 150

_C

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t v 5 sec

R

40

50

Steady State

80

95

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

15

20

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.