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CQY36N Datasheet(PDF) 1 Page - Vishay Siliconix |
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CQY36N Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81001 78 Rev. 1.7, 04-Sep-08 CQY36N Vishay Semiconductors DESCRIPTION CQY36N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package without lens. FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): ∅ 1.8 • Peak wavelength: λ p = 950 nm • High reliability • Angle of half intensity: ϕ = ± 55° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector BPW16N • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Radiation source in near infrared range Note Test conditions see table “Basic Characteristics“ Note MOQ: minimum order quantity Note Tamb = 25 °C, unless otherwise specified 94 8638 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) CQY36N 1.5 ± 55 950 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM CQY36N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T- ¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Surge forward current tp ≤ 100 µs IFSM 2A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 25 to + 100 °C Soldering temperature t ≤ 3 s Tsd 245 °C Thermal resistance junction/ambient leads not soldered RthJA 450 K/W |
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