Electronic Components Datasheet Search |
|
SI5485DU-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
|
SI5485DU-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 73779 S-81448-Rev. C, 23-Jun-08 Vishay Siliconix Si5485DU Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 20 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 3.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 0.6 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 4.5 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5.9 A 0.021 0.025 Ω VGS = - 2.5 V, ID = - 2.4 A 0.034 0.042 Forward Transconductancea gfs VDS = - 10 V, ID = - 5.9 A 24 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 1100 pF Output Capacitance Coss 300 Reverse Transfer Capacitance Crss 230 Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 8.8 A 28 42 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 8.8 A 14 21 Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 4.9 Gate Resistance Rg f = 1 MHz 8 Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 1.4 Ω ID ≅ - 7.1 A, VGEN = - 4.5 V, Rg = 1 Ω 15 25 ns Rise Time tr 50 75 Turn-Off Delay Time td(off) 55 85 Fall Time tf 80 120 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1.4 Ω ID ≅ - 7.1 A, VGEN = - 10 V, Rg = 1 Ω 715 Rise Time tr 15 25 Turn-Off Delay Time td(off) 50 75 Fall Time tf 80 120 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 12 A Pulse Diode Forward Current ISM 30 Body Diode Voltage VSD IS = - 7.1 A, VGS = 0 V - 0.82 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 7.1 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 17 30 nC Reverse Recovery Fall Time ta 14 ns Reverse Recovery Rise Time tb 16 |
Similar Part No. - SI5485DU-T1-GE3 |
|
Similar Description - SI5485DU-T1-GE3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |