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SI5509DC Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI5509DC Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 12 page  Si5509DC Vishay Siliconix New Product www.vishay.com 2 Document Number: 73629 S–60417—Rev. A, 20-Mar-06 SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain Source Breakdown Voltage VDS VGS = 0 V, ID = 250 mA N-Ch 20 Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = –250 mA P-Ch –20 VDS Temperature Coefficient DVDS/TJ ID = 250 mA N-Ch 18.4 mV/ _C VDS Temperature Coefficient DVDS/TJ ID = –250 mA P-Ch –15.1 mV/ _C VGS( h) Temperature Coefficient DVGS( h)/TJ ID = 250 mA N-Ch –3.4 VGS(th) Temperature Coefficient DVGS(th)/TJ ID = –250 mA P-Ch 2.2 Gate Threshold Voltage VGS( h) VDS = VGS, ID = 250 mA N-Ch 0.7 2 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA NCh P-Ch –0.7 –2 V Gate Body Leakage IGSS VDS =0V VGS = "12 V N-Ch 100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V NCh P-Ch –100 nA VDS = 20 V, VGS = 0 V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS = –20 V, VGS = 0 V NCh P-Ch –1 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55 _C N-Ch 10 mA VDS = –20 V, VGS = 0 V, TJ = 55 _C NCh P-Ch –10 On State Drain Currentb ID( ) VDS v 5 V, VGS = 4.5 V N-Ch 10 A On-State Drain Currentb ID(on) VDS v –5 V, VGS = –4.5 V NCh P-Ch –15 A VGS = 4.5 V, ID = 5.0 A N-Ch 0.043 0.052 Drain Source On State Resistanceb rDS( ) VGS = –4.5 V, ID = –3.9 A NCh P-Ch 0.074 0.090 W Drain-Source On-State Resistanceb rDS(on) VGS = 2.5 V, ID = 3.9 A N-Ch 0.068 0.084 W VGS = –2.5 V, ID = –2.9 A NCh P-Ch 0.128 0.160 Forward Transconductanceb gf VDS = 10 V, ID = 5.0 A N-Ch 10.4 S Forward Transconductanceb gfs VDS = –10 V, ID = –3.9 A NCh P-Ch 8.2 S Dynamica Input Capacitance Ci N-Ch 455 Input Capacitance Ciss N-Channel P-CH 300 Output Capacitance C N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz N-Ch 85 pF Output Capacitance Coss P-Channel NCh P-Ch 95 pF Reverse Transfer Capacitance C P Channel VDS = –10 V, VGS = 0 V, f = 1 MHz N-Ch 50 Reverse Transfer Capacitance Crss NCh P-Ch 65 VDS = 10 V, VGS = 5 V, ID = 4.0 A N-Ch 4.4 6.6 Total Gate Charge Q VDS = –10 V, VGS = –5 V, ID = –3.9 A P-Ch 4.1 6.2 Total Gate Charge Qg N-Ch 3.8 5.7 N-Channel NCh P-Ch 3.9 5.9 nC Gate Source Charge Q N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.0 A N-Ch 0.9 nC Gate-Source Charge Qgs P-Channel NCh P-Ch 0.7 Gate Drain Charge Q d P Channel VDS = –10 V, VGS = –4.5 V, ID = –3.9 A N-Ch 0.95 Gate-Drain Charge Qgd NCh P-Ch 1.25 Gate Resistance R f=1MHz N-Ch 1.9 W Gate Resistance Rg f = 1 MHz NCh P-Ch 8 W |
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